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MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz Features * Ideal for DECT Applications * Power Set Pin for Adjustable Output Power High Power Mode: 25 dBm Low Power Mode: 15 dBm * Power Gain: 25 dB Typical * Voltage Supply Compensation * Ramp Power Control: 1.7 V Enable * Micro-Amp Shutdown Current * Operates from 1.8 V to 3.6 V * Lead-Free 3 mm 12-Lead PQFN Package * 100% Matte Tin Plating over Copper * Halogen-Free "Green" Mold Compound * RoHS* Compliant and 260C Reflow Compatible M/A-COM Products Rev. V1 Functional Schematic Description The MAAPSS0113 is a three stage power amplifier designed for Digitally Enhanced Cordless Telephone applications. The power amplifier is available in a lead-free 3 mm 12-lead PQFN plastic package. The MAAPSS0113 features an integrated power enable pin (5) for accurate ramp control and a separate power mode pin (2) for current savings in a low power mode state. Both control pins operate with 1.7 V logic. A voltage compensation circuit is also included for applications where the amplifier supply voltage is not regulated and is directly connected to the battery. Pin Configuration Pin No. 1 2 3 4 5 6 Pin Name RFIN VM GND N/C VEN PFC RFOUT / VCC3 RFOUT / VCC3 RFOUT / VCC3 VCC2 GND VCC1 3 Description RF Input Power Mode Ground No Connection Power Enable Power Flatness Control RF Output, 3rd Stage Supply RF Output, 3rd Stage Supply RF Output, 3rd Stage Supply 2nd Stage Supply Ground 1st Stage Supply RF & DC Ground Ordering Information Part Number MAAPSS0113TR-3000 MAAPSS0113SMB 1,2 7 Package 3000 piece reel 8 9 10 11 12 Pad Sample Board 1880 - 1930 MHz tuning 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. GND 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz Electrical Specifications: F = 1880 - 1930 MHz, TA = 25 C, Z0 = 50 Parameter Input Power Input Return Loss Test Conditions VM = 0 V VM = 1.7 V VM = 1.7 V, VCC = 3.0 V VCC = 2.4 V VCC = 2.0 V VCC = 1.8 V TA = 0 C to 50 C, VCC = 2.4 V VEN = 1.6 t o 1.9 V , VCC = 2.4 V VM = 1.7 V, VCC = 3.0 V VM = 0 V, VCC = 2.4 V VM = 0 V, VCC = 2.4 V VCC = 3.0 V, VEN = 0.5 V VEN, VM low VEN, VM high VM current VEN current VM = 1.7 V, VCC = 2.4 V VEN = 0 V, VCC = 2.4 V +1.5 V < VCC < +3.5 V, POUT = HPM & LPM, VSWR < 6:1 -20C < TA < +70C ton: RF burst to (Avg Power - 1 dB) toff: (Avg Power - 1 dB) to RF off S S 2fo 3fo Units dBm dB dB dBm dBm dBm dBm dB dB mA dBm mA A V V mA mA dBc dBc dB Min. -- -- -- -- -- 22 -- -- -- -- 12 -- -- 0 1.6 -- -- -- -- -- Typ. 0 11 12 26 25.5 24 23.5 0.8 1 350 15 95 1 -- 1.7 0.5 1 -33 -35 46 Max. -- -- -- 27 -- -- -- -- -- 500 -- 150 10 0.5 1.9 1 2 -- -- -- M/A-COM Products Rev. V1 POUT, High Power Mode (HPM) POUT vs. Temperature, HPM POUT vs. VEN Current, HPM POUT, Low Power Mode (LPM) Current, LPM Current, Shutdown Control Pins Harmonics Forward Isolation Stability Turn on/off time All spurs < -60 dBc -- -- 3 3 -- -- Absolute Maximum Ratings 4,5,6 Parameter Input Power Operating Supply Voltage Operating Control Voltage Operating Temperature Channel Temperature Storage Temperature Absolute Maximum 5 dBm 4.0 Volts 3.0 Volts -20 C to +85 C 150 C -40 C to +150 C Logic Table 7 VEN 0 0 1 1 VM 0 1 0 1 State OFF OFF LPM HPM 7. Logic 1 = 1.6 V to 1.9 V, Logic 0 = 0 V to 0.5 V. Operating the MAAPSS0113 The MAAPSS0113 is sensitive to electrostatic discharge (ESD). Use proper ESD control techniques when handling this device. To operate the MAAPSS0113, follow these steps. Ramp down or shut down in reverse order. 1. Apply VCC (2.4 V). 2. Apply VM (0 or 1.7 V). 3. Apply PIN (-2 to 2 dBm). 4. Ramp VEN from 0 to 1.7 V. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/A-COM does not recommend sustained operation near these survivability limits. 6. For operation above 4V as required for 3 cell systems, a dropping diode is required. See application note page 6. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz Evaluation Board Schematic VBAT D1 M/A-COM Products Rev. V1 Recommended PCB Configuration VCC C2 C6 C3 C7 C4 C8 RFIN T2 L1 C10 VM T5 C1 PG PG PG PG C9 RFOUT VEN R1 T6 C11 R2 C5 Transmission Line Dimensions, 0.20 mm thick FR4 Designator T1 T2 T3 T4 T5 T6 Length (mm) 10.67 2.22 1.80 0.735 4.275 3.13 Width (mm) .254 .380 .380 .380 .380 .254 Parts List Component C1 - C5 C6 C7 C8 C9 C10 C11 L1 R1 R2 Value 1 F 68 pF 18 pF 330 pF 3 pF 10 pF 15000 pF 10 nH 158 15 K Foot Print 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 Manufacturer Murata Murata Murata Murata Murata Murata Murata Coilcraft Panasonic Panasonic 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz POUT, PAE, ICC vs. PIN @ 2.4 V, 1900 MHz 50 0.5 M/A-COM Products Rev. V1 High Power Mode Typical Performance, VM = 1.7 V (using the supplied sample board BOM) POUT, PAE, ICC vs. VCC @ 1900 MHz 50 I 0.5 40 PAE I 0.4 40 CC 0.4 CC PAE 30 P OUT 0.3 30 P 0.3 OUT 20 0.2 20 0.2 10 0.1 10 0.1 0 -15 0.0 -10 -5 0 5 0 1.5 2.0 2.5 3.0 0.0 3.5 P (dBm) IN V CC (Volts) POUT vs. Temperature @ 1900 MHz, PIN = 0 dBm 28 ICC vs. Temperature @ 1900 MHz, PIN = 0 dBm 0.50 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0.45 26 0.40 24 0.35 0.30 22 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0.25 0.20 -20 20 -20 -10 0 10 20 30 40 50 60 70 -10 0 10 20 30 40 50 60 70 Temperature (C) Temperature (C) POUT, 2fo, 3fo vs. PIN @ 2.4 V 30 P OUT POUT, PAE, ICC vs. Frequency @ VCC = 2.4 V, PIN = 0 dBm 50 0.5 20 40 PAE I CC 0.4 10 0 2f 30 P o o OUT 0.3 -10 -20 3f 20 0.2 10 0.1 -30 -40 -15 -10 IN -5 0 5 0 1880 1890 1900 1910 1920 0.0 1930 P (dBm) 4 Frequency (MHz) ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz POUT, ICC vs. PIN @ 2.4 V, 1900 MHz 25 0.25 M/A-COM Products Rev. V1 Low Power Mode Typical Performance, VM = 0 V (using the supplied sample board BOM) POUT, ICC vs. VCC @ 1900 MHz 20 0.5 20 P OUT 0.20 16 P 0.4 OUT 15 I 0.15 12 0.3 10 CC 0.10 8 I 0.2 5 0.05 4 CC 0.1 0 -15 0.00 -10 -5 0 5 0 1.5 2.0 2.5 3.0 0.0 3.5 P (dBm) IN V CC (Volts) POUT vs. Temperature @ 1900 MHz, PIN = 0 dBm 20 ICC vs. Temperature @ 1900 MHz, PIN = 0 dBm 0.125 15 0.100 0.075 10 0.050 5 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0.025 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0 -20 0.000 -10 0 10 20 30 40 50 60 70 -20 -10 0 10 20 30 40 50 60 70 Temperature (C) Temperature (C) Pout vs. VEN @ VCC = 2.4 V, VM = 1.7 V, PIN = 0 dBm 30 20 S11 vs. Frequency, State @ VCC = 2.4V 0 Off LPM HPM -4 10 0 -10 -20 -30 -40 -50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -8 -12 -16 -20 1.88 1.89 1.90 1.91 1.92 1.93 V 5 EN (V) Frequency (GHz) ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz High Voltage Operation (3 Cells) The MAAPSS0113 amplifier product is designed for use in phone systems using 2 battery cells for mobile units (3.6V charging, 2.4V nom.) or up to 3.6V regulated for base-station units. For operation with higher supply voltages such as in 3 cell mobile units (4.5V charging), a dropping diode is required to reduce the voltage to the amplifier. An example schematic is shown in Figure 1. A series diode is placed between the battery supply and the three stages of the amplifier. An example diode is the Vishay ES1A surface mount diode. This diode has a maximum forward current of 1A and a forward voltage drop of 1V. 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 M/A-COM Products Rev. V1 3 Cell Changing Voltage Nominal 3 Cell Voltage Battery Voltage (V) Figure 2. VCC vs. 3 cell battery voltage with series dropping diode. 30 VBAT D1 VCC C2 C6 T3 T4 25 20 C3 C7 C4 C8 15 10 5 0 HPM LPM VCC1 VCC2 VCC3 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 Battery Voltage (V) Figure 1. Supply schematic for 3 cell operation showing external dropping diode, ex. Vishay ES1A Figure 3. Pout vs. 3 cell battery voltage 0.6 0.5 0.4 0.3 0.2 0.1 0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 Figure 2 shows the measured affect of the dropping diode on the supply voltage (VCC) to the amplifier. Because of the approximate 1V forward drop of the diode, the maximum supply to the amplifier is 3.6V for a charging condition of 4.5V. Figures 3 and 4 show the power and current versus a 3 cell battery range, respectively. The 3 cell performance with the dropping diode is very similar to the electrical specification at 2.4V shown on page 2. The key to matching this data is choosing a diode with approximately 1V forward drop. Because of this forward drop, the maximum voltage from the battery supply can increase from 4V to 5V. 6 HPM LPM Battery Voltage (V) Figure 4. Current vs. 3 cell battery voltage ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz Lead-Free 3 mm 12-lead PQFN M/A-COM Products Rev. V1 Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. |
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